View MTD120C10H8_8689518.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

cystech electronics corp. spec. no. : c986h8 issued date : 2016.10.14 revised date : page no. : 1/14 MTD120C10H8 cystek product specification n- and p-channel enhancement mode mosfet MTD120C10H8 features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTD120C10H8-0-t6-g dfn 5 6 (pb-free lead plating & halogen-free package) 3000 pcs / tape & reel MTD120C10H8 dfn5 6 g gate s source d drain n-ch p-ch bv dss 100v -100v i d @v gs =10v(-10v), t a =25 c 2.7a -3.0a i d @v gs =10v(-10v), t c =25 c 7.8a -8.8a r dson(typ) @v gs =10v(-10v) 128m 114m r dson(typ) @v gs =4.5v(-4.5v) 135m 133m pin 1 environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c986h8 issued date : 2016.10.14 revised date : page no. : 2/14 MTD120C10H8 cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 100 -100 gate-source voltage v gs 20 20 v t a =25 c, v gs =10v (-10v) 2.7 -3.0 t a =70 c, v gs =10v (-10v) i dsm 2.2 -2.4 t c =25 c, v gs =10v (-10v) 7.8 -8.8 continuous drain current t c =100 c, v gs =10v (-10v) i d 4.9 -5.6 pulsed drain current (note 1 & 2) i dm 25 -28 a t a =25 c 2.5 (note 3) t a =70 c p dsm 1.6 (note 3) t c =25 c 21 power dissipation t c =100 c p d 8.4 w operating junction and storage te mperature range tj; tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 6 thermal resistance, junction-to-ambient, max r ja 50 (note 3) c/w note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1% 3. surface mounted on 1 in2 copper pad of fr-4 board; 125 c/w when mounted on minimum copper pad. n-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 100 - - v gs =0v, i d =250 a v gs(th) 1.0 - 2.5 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0v - - 1 v ds =80v, v gs =0v i dss - - 25 a v ds =80v, v gs =0v, tj=125 c - 128 165 i d =2a, v gs =10v *r ds(on) - 135 175 m i d =1.5a, v gs =4.5v *g fs - 5.5 - s v ds =10v, i d =2a dynamic ciss - 244 - coss - 34 - crss - 15 - pf v ds =30v, v gs =0v, f=1mhz *td (on) - 4.2 - *tr - 16.4 - *td (off) - 19.4 - *tf - 16.6 - ns v ds =50v, i d =1a, v gs =10v, r g =6
cystech electronics corp. spec. no. : c986h8 issued date : 2016.10.14 revised date : page no. : 3/14 MTD120C10H8 cystek product specification *qg - 7 - *qgs - 0.8 - *qgd - 1.8 - nc v ds =80v, i d =2a, v gs =10v body diode *i s - - 2.7 *i sm - - 11 a *v sd - 0.79 1.2 v v gs= 0v, i s =2a *trr - 17.7 - ns *qrr - 14.7 - nc i f =2a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% p-channel electrical characteristics (tc=25c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -100 - - v gs =0v, i d =-250 a v gs(th) -1.0 - -2.5 v v ds =v gs , i d =-250 a i gss - - 10 na v gs =20v, v ds =0v - - -1 v ds =-80v, v gs =0v i dss - - -25 a v ds =-80v, v gs =0v, tj=125 c - 114 145 i d =-2a, v gs =-10v *r ds(on) - 133 175 m i d =-1.5a, v gs =-4.5v *g fs - 6.7 - s v ds =-10v, i d =-2a dynamic ciss - 774 - coss - 76 - crss - 39 - pf v ds =-30v, v gs =0v, f=1mhz *td (on) - 6.8 - *tr - 17.4 - *td (off) - 56.8 - *tf - 32 - ns v ds =-50v, i d =-1a, v gs =-10v, r g =6 *qg - 17.9 - *qgs - 1.9 - *qgd - 4.9 - nc v ds =-80v, i d =-2a, v gs =-10v body diode *i s - - -3 *i sm - - -12 a *v sd - -0.78 -1.2 v v gs =0v, i s =-2.5a *trr - 17.5 - ns *qrr - 15.2 - nc i f =-2a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c986h8 issued date : 2016.10.14 revised date : page no. : 4/14 MTD120C10H8 cystek product specification recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c986h8 issued date : 2016.10.14 revised date : page no. : 5/14 MTD120C10H8 cystek product specification recommended stencil design note : 1. stencil thickness 5 mil (0.127mm) 2. may need to be adjusted to specific requirements.
cystech electronics corp. spec. no. : c986h8 issued date : 2016.10.14 revised date : page no. : 6/14 MTD120C10H8 cystek product specification typical characteristics : q1( n-channel ) typical output characteristics 0 4 8 12 16 20 0 4 8 12 16 20 v ds , drain-source voltage(v) i d , drain current (a) 10v, 9v, 8v, 7v, 6v, 5v v gs =2.5v 3v 3.5v 4v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =4.5v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 100 120 140 160 180 200 220 240 260 280 300 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) v gs =10v, i d =2a r dson @tj=25c : 128mtyp. i d =2a v gs =4.5v, i d =1.5a r dson @tj=25c : 135m typ.
cystech electronics corp. spec. no. : c986h8 issued date : 2016.10.14 revised date : page no. : 7/14 MTD120C10H8 cystek product specification typical characteristics(cont.) : q1( n-channel) capacitance vs drain-to-source voltage 10 100 1000 0 5 10 15 20 25 30 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0246810 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =2a v ds =80v maximum safe operating area 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) t a =25c, tj=150c v gs =10v, r ja =50c/w single pulse dc 100ms r dson limited 100 s 10ms 1ms 1s maximum drain current vs case temperature 0 0.5 1 1.5 2 2.5 3 3.5 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c v gs =10v r ja =50 c/w
cystech electronics corp. spec. no. : c986h8 issued date : 2016.10.14 revised date : page no. : 8/14 MTD120C10H8 cystek product specification typical characteristics(cont.) : q1( n-channel) single pulse power rating, junction to ambient (note on page 2) 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =150c t a =25c r ja =50c/w typical transfer characteristics 0 4 8 12 16 20 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t1/t2 3.t jm -t a =p dm *r ja (t) 4.r ja =50c/w
cystech electronics corp. spec. no. : c986h8 issued date : 2016.10.14 revised date : page no. : 9/14 MTD120C10H8 cystek product specification typical characteristics : q2( p-channel) typical output characteristics 0 4 8 12 16 20 024681 0 brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage -v ds , drain-source voltage(v) -i d , drain current (a) 4v 10v,9v,8v,7v,6v, 5v, -v gs =3v -i d =250 a, v =0v gs static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) -v gs =4.5v -v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0246810 -i dr , reverse drain current(a) -v sd , source-drain voltage(v) static drain-source on-state resistance vs gate-source voltage 60 100 140 180 220 260 300 340 380 420 024681 -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) v gs =0v tj=25c tj=150c 0 -i d =2a drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance -v gs =10v, -i d =2a r dson @tj=25c : 114 m typ. v gs =-4.5v, i d =-1.5a r dson @tj=25c : 133m typ.
cystech electronics corp. spec. no. : c986h8 issued date : 2016.10.14 revised date : page no. : 10/14 MTD120C10H8 cystek product specification typical characteristics(cont.) : q2(p-channel) capacitance vs drain-to-source voltage 10 100 1000 10000 0 5 10 15 20 25 30 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) , normalized threshold voltage -i d =250 a -i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance(s) -v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 4 8 12 16 20 24 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =-2a v ds =-80v maximum safe operating area 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 -v ds , drain-source voltage(v) -i d , drain current(a) t a =25c, tj=150c v gs =10v, r ja =50c/w single pulse dc r dson limited 100 s 1ms 10ms 100ms 1s maximum drain current vs case temperature 0 0.5 1 1.5 2 2.5 3 3.5 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c -v gs =10v r ja =50c/w
cystech electronics corp. spec. no. : c986h8 issued date : 2016.10.14 revised date : page no. : 11/14 MTD120C10H8 cystek product specification typical characteristics(cont.) : q2(p-channel) single pulse power rating, junction to ambient (note on page 2) 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =150c t a =25c r ja =50c/w typical transfer characteristics 0 4 8 12 16 20 012345 - v gs , gate-source voltage(v) - i d , drain current(a) v ds =-10v transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =50c/w
cystech electronics corp. spec. no. : c986h8 issued date : 2016.10.14 revised date : page no. : 12/14 MTD120C10H8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c986h8 issued date : 2016.10.14 revised date : page no. : 13/14 MTD120C10H8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c986h8 issued date : 2016.10.14 revised date : page no. : 14/14 MTD120C10H8 cystek product specification dfn5 6 dimension millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.80 1.00 0.031 0.039 e 5.70 5.90 0.224 0.232 a1 0.00 0.05 0.000 0.002 e 1.27 bsc 0.050 bsc b 0.35 0.49 0.014 0.019 h 5.95 6.20 0.234 0.244 c 0.254 ref 0.010 ref l1 0.10 0.18 0.004 0.007 d 4.90 5.10 0.193 0.201 g 0.60 ref 0.024 ref f 1.60 ref 0.063 ref k 1.60 ref 0.063 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: date code d120 device ame n 8-lead dfn5 6 plastic package cys package code : h8 c 1 0

▲Up To Search▲

Price & Availability of MTD120C10H8

	To Download MTD120C10H8 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .